Simulation of Ultrafast Optical Transitions using Genetic Algorithm

The purpose of this paper is to investigate the possibility of application of the genetic algorithm to quantum control of electronic transitions between energy bands in solids. In particular, the hole transitions between valence bands induced by ultrashort (femtosecond duration) electric eld pulse will be considered. Examples are presented to illustrate the effciency of the algorithm in this case

Theoretical analysis of electronic band structure of 2-to-3-nm Si nanocrystals

We introduce a general method which allows reconstruction of electronic band structure of nanocrystals from ordinary real-space electronic structure calculations. A comprehensive study of band structure of a realistic nanocrystal is given including full geometric and electronic relaxation with the surface passivating groups. In particular, we combine this method with large scale density functional theory calculations to obtain insight into the luminescence properties of silicon nanocrystals of up to 3 nm in size depending on the surface passivation and geometric distortion. We conclude that the band structure concept is applicable to silicon nanocrystals with diameter larger than $\approx$ 2 nm with certain limitations. We also show how perturbations due to polarized surface groups or geometric distortion can lead to considerable moderation of momentum space selection rules

Spatial homogeneity of optically switched semiconductor photonic crystals and of bulk semiconductors

This paper discusses free carrier generation by pulsed laser fields as a mechanism to switch the optical properties of semiconductor photonic crystals and bulk semiconductors on an ultrafast time scale. Requirements are set for the switching magnitude, the time-scale, the induced absorption as well as the spatial homogeneity, in particular for silicon at lambda= 1550 nm. Using a nonlinear absorption model, we calculate carrier depth profiles and define a homogeneity length l_hom. Homogeneity length contours are visualized in a plane spanned by the linear and two-photon absorption coefficients. Such a generalized homogeneity plot allows us to find optimum switching conditions at pump frequencies near v/c= 5000 cm^{-1} (lambda= 2000 nm). We discuss the effect of scattering in photonic crystals on the homogeneity. We experimentally demonstrate a 10% refractive index switch in bulk silicon within 230 fs with a lateral homogeneity of more than 30 micrometers. Our results are relevant for switching of modulators in absence of photonic crystals

Effect of well-width on the electro-optical properties of a quantum well

We record photoreflectance from Ge/GeSi modulation doped quantum wells possessing $10^4$ V/cm perpendicular electric fields. Qualitatively very different spectra are obtained from samples of well-width 100 \AA and 250 \AA. Comparing the wavefunctions calculated from an $8 \times 8$ \textbf{k.p} theory, we find that while they remain confined in the narrower 100 \AA QW, the electric field causes them to tunnel into the forbidden gap in the 250 \AA\ well. This implies that the samples should show a transition from the quantum confined Franz-Keldysh effect to the bulk-like Franz-Keldysh effect. Close to the band-edge where Franz-Keldysh effects are important, simulated photoreflectance spectra reproduce the essential features of the experiment, without any adjustable parameters.Comment: 8 pages, 8 figures. Submitted to Phys. Rev.

Long range scattering effects on spin Hall current in pp-type bulk semiconductors

Employing a nonequilibrium Green's function approach, we examine the effects of long-range hole-impurity scattering on spin-Hall current in $p$-type bulk semiconductors within the framework of the self-consistent Born approximation. We find that, contrary to the null effect of short-range scattering on spin-Hall current, long-range collisions do produce a nonvanishing contribution to the spin-Hall current, which is independent of impurity density in the diffusive regime and relates only to hole states near the Fermi surface. The sign of this contribution is opposite to that of the previously predicted disorder-independent spin-Hall current, leading to a sign change of the total spin-Hall current as hole density varies. Furthermore, we also make clear that the disorder-independent spin-Hall effect is a result of an interband polarization directly induced by the dc electric field with contributions from all hole states in the Fermi sea.Comment: 9 pages, 1 figur